Calorimetric measurement of absorption loss in orientation-patterned GaP and GaAs

Author Info:

Yelena Isyanova, Peter F. Moulton, and Peter G. Schunemann
SPIE Photonics West 2015, 7-12 February 2015, Moscone Center, San Francisco

Abstract:

Materials grown by vapor phase techniques such as chemical vapor deposition or hydride vapor phase epitaxy (HVPE) often exhibit very low losses which are difficult to quantify by simple transmission measurements.

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The measurement of extremely low absorption coefficients can be carried out by laser calorimetric or thermal rise techniques, which determine the absorption coefficients by measuring the temperature increase caused by the absorbed laser radiation. We report here on results of measuring absorption coefficients of bulk HVPE-grown orientation-patterned GaAs (OP-GaAs) and GaP (OP-GaP) crystals using one of the methods of laser calorimetry, called transient calorimetry. In our setup, the sample under test is attached to a high-conductivity copper holder and placed in a vacuum chamber. A 2-micron CW laser beam is transmitted through the sample and the temperature rise in the sample is measured and, through the calorimeter calibration process, related to the power absorbed in the sample.

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Calorimetric measurement of absorption loss in orientation-patterned GaP and GaAs

Copyright © 2015 Society of Photo-Optical Instrumentation Engineers. Proc. SPIE 9347, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications XIV, 93471B (March 24, 2015); doi:10.1117/12.2081225. This paper is made available as an electronic reprint (preprint) with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

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